1/9 may 2001 STP6NB25 STP6NB25fp n-channel 250v - 0.9 w - 5a to-220/to-220fp powermesh? mosfet n typical r ds (on) = 0.9 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an ad- vanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the companys proprieraty edge termi- nation structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. applications n high current, high speed switching n uninterruptible power supply (ups) n dc-dc & dc-ac converters for telecom , industrial and consumer environment absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STP6NB25 250 v < 1.1 w 5 a STP6NB25fp 250 v < 1.1 w 5 a symbol parameter value unit STP6NB25 STP6NB25fp v ds drain-source voltage (v gs = 0) 250 v v dgr drain-gate voltage (r gs = 20 k w ) 250 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 5 5 (*) a i d drain current (continuos) at t c = 100c 3.15 3.15 (*) a i dm ( l ) drain current (pulsed) 20 20 (*) a p tot total dissipation at t c = 25c 65 30 w derating factor 0.52 0.24 w/c dv/dt (1) peak diode recovery voltage slope 4 v/ns v iso insulation withstand voltage (dc) - 2000 t stg storage temperature C60 to 150 c t j max. operating junction temperature 150 c (1)i sd 5a, di/dt 100a/s, v dd v (br)dss , t j t jmax. (*)limited only by maximum temperature allowed internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp
STP6NB25/fp 2/9 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220 to-220fp rthj-case thermal resistance junction-case max 1.92 4.17 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 120 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 250 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d =3 a 0.9 1.1 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =3a 2.4 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 260 pf c oss output capacitance 68 pf c rss reverse transfer capacitance 9pf
3/9 STP6NB25/fp electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time rise time v dd = 125 v, i d = 3 a r g = 4.7 w v gs = 10 v (see test circuit, figure 3) 9ns t r 9ns q g total gate charge v dd = 200v, i d = 6 a, v gs = 10v 12 17 nc q gs gate-source charge 7.5 nc q gd gate-drain charge 3 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 200v, i d = 6 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 8ns t f fall time 7 ns t c cross-over time 15 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5 a i sdm (2) source-drain current (pulsed) 20 a v sd (1) forward on voltage i sd = 5 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 6 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 160 ns q rr reverse recovery charge 720 c i rrm reverse recovery current 9 a safe operating area for to-220 safe operating area for to-220fp
STP6NB25/fp 4/9 thermal impedence for to-220 output characteristics transconductance transfer characteristics static drain-source on resistance thermal impedence for to-220fp
5/9 STP6NB25/fp capacitance variations normalized on resistance vs temperature source-drain diode forward characteristics normalized gate threshold voltage vs temp. gate charge vs gate-source voltage
STP6NB25/fp 6/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/9 STP6NB25/fp dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STP6NB25/fp 8/9 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data
9/9 STP6NB25/fp information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroel ectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2001 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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